后栅结构SnO_2场致发射显示器件的研制

Fabrication of Back-Gate Field Emission Display with SnO_2 Nanowire

采用高温气相法生长SnO2纳米线,扫描电子显微镜和X射线衍射仪分析表明所生长的SnO2纳米线大小均匀,直径约为150 nm,长可达10μm。结合丝网印刷法转移SnO2,制备成阴极阵列。封接阴极板与荧光屏成后栅型场致发射显示(FED)器件,测试其场致发射性能,分析讨论栅极电压和阳极电压对场发射性能的影响。实验表明后栅型SnO2-FED具有良好的栅极调控作用,在1600 V阳极电压和200 V栅极电压下工作实现全屏发光,平均发光亮度为560 cd/m2,具有潜在的应用前景。

The back-gate field emission display （FED） panel was fabricated with the well-defined SnO2 nano-wire, over 10 pan long, 150 nm in diameter, grown by chemical vapor deposition （CVD）. The microstructures of the SnO2 nanowires were characterized with X-ray diffraction, and scanning electron microscopy. The back-gate FED device was then constructed with the SnO2 nanowires arrays, transferred from the crucible to the cathode via screen printing. The field emission characteristics of the prototyped device were evaluated. The preliminary results show that the gate is capable of regulating the emission characteristics. Besides,at an anode of 1600 V and a gate voltage of 200 V, full screen emission was clearly observed with an averaged luminance of 560 cd/m2.