摘要
使用射频磁控溅射和化学溶液法制备了SiO2/聚酰亚胺(PI)/SiO2绝缘膜。分别使用X射线衍射、扫描电镜对薄膜结构和薄膜表面形貌进行了表征;利用超高阻微电流测试仪测试了SiO2/PI/SiO2复合绝缘膜漏电流和电压击穿特性;采用SiO2/PI/SiO2作为绝缘膜,制作了后栅型场致发射器件,使用场发射测试系统测试了器件的开启电压、发射电流以及发光亮度。结果表明:SiO2/PI/SiO2复合绝缘膜具有高的击穿电压和低的漏电流密度,后栅器件中栅极对阴极表面的电场强度调控作用明显,阳极电压为750V时,栅极开启电压为91 V,阳极电流可达384μA,栅极漏电流仅为59μA,器件最高亮度可达600 cd/m2。
The SiO2/polymide （PI）/SiO2 composite films were deposited by a combination of RF magnetron sputter- ing and chemical solution deposition. The microstructures and properties of the composite films were characterized with X- ray diffraction and scanning electron microscopy. The impacts of the deposition conditions on quality of the films were studied. The prototyped under-gate field emission display （FED） device was fabricated with the SiO2/PI/SiO2 composite films. Various properties of the device, including the breakdown and on-set voltages, peak emission current, density, lumi- nons intensity, and leakage current, were measured. The results show that the SiO2/PI/SiO2 composite film is a potential device-grade FED material with high breakdown voltage and low leakage current. For example,at an anode voltage of 750 V and an on-set grid voltage of 91 V, the anode and grid currents were found to be 384 p.A and 59 uA, respectively, with a luminous intensity of 600 cd/m2.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2012年第3期214-218,共5页
Chinese Journal of Vacuum Science and Technology
基金
教育厅资助省属高校项目(JA09017)
福建省光电平台资助项目
