p型微晶硅膜的研究及其在异质结太阳电池中的应用

Growth of p-Type Microcrystalline Silicon Films and Its Application in Heterojunction Solar Cells

首先采用射频等离子体增强化学气相沉积技术制备了电导率为0.13 S/cm、晶化率为50%的p型微晶硅,然后制备了μc-Si∶H(p)/c-Si(n)异质结太阳电池。初步研究了硼掺杂比、辉光功率密度、p型硅薄膜的厚度和氢处理时间等这些参数对电池开压的影响。在优化的工艺参数下得到异质结电池最大开路电压Voc为564mV。

The p-type microcrystalline （pc） silicon thin films were grown by RF plasma enhanced chemical vapor deposition （RF-PECVD） on glass substrates, and the ttc-Si： H（p）/c-Si（n） hetero-junction solar cells were fabricated with the films. The impacts of the growth conditions, such as the pressure, boron-doping, discharge power, substrate tem- perature,gas flow rate,and concentration of silane, on the microstmctures and properties of the films were studied. The current-voltage characteristics of the hetero-junction were evaluated. The preliminary results show that the solar ceils, made of the films grown under optimized film growth conditions, works well with an open-circuit voltage of 564 mV. Possi- ble improvement of the ttc-Si film growth was also tentatively discussed.