摘要
采用射频磁控溅射法,在玻璃基片上生长了ZnO:S薄膜。XRD测试表明所制薄膜为六角纤锌矿结构,具有明显的(002)衍射峰。室温下的透射光谱测量结果表明,随着S掺入量的增加,ZnO:S合金薄膜的吸收边向长波长方向移动,但在可见光部分有较高的透过率。在此基础上计算了各样品的禁带宽度,结果表明,在S掺入量小于8%的范围内,随着S掺入量的增加,禁带宽度减小。样品紫外光电导特性明显,在波长365nm、功率4000μW/cm2紫外光源照射下,紫外光与可见光所对应光电流响应之比可达3。
S-doped ZnO（ZnO ： S） film was fabricated by radio frequency magnetron sputtering. X-ray diffrac- tion indicated the ZnO ： S films with the（002） preference reflection of hexagonal wurtzite structure when S content changed from 0 to 7. 99%. Transmission spetrum at room temperature showed an intense ultraviolet absorbtion which shifted to low-energy side with increased S content. But these films with a high transparency in the visible wavelength. The calculation of Eg showed energy gap shifted to low-energy side when S was incorporated. ZnO ： S films showed remarkable photoconductance. Under a wavelength of 365nm UV light and a power of 4000/2W/cm2, the ratio of ul- traviolet and visible light photocurrent up to 3.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2012年第6期20-23,共4页
Materials Reports
基金
四川省应用基础项目(07JY029-087)
