掺硼浓度对金刚石薄膜二次电子发射特性的影响

Influence of Concentration of Boron on Secondary Electron Emission Study of Diamond Thin Films

掺硼金刚石薄膜具有负电子亲和势和良好的电子运输性能且容易制备,作为冷阴极材料在图像显示技术和真空技术等领域都存在巨大的应用价值,引起人们的广泛关注。采用MPCVD法利用氢气、甲烷和硼烷的混合气体,制备出不同浓度的掺硼金刚石薄膜。结果表明,掺硼浓度影响金刚石薄膜的物相结构、组织形貌,进而影响其二次电子发射性能,当硼烷的流量为4mL/min时,制备的金刚石薄膜质量最好,二次电子发射系数约为90。

As an attractive cold cathode material, B-doped diamond thin films were used in picture display tech- nique and vacuum technique etc, because of its specific negative electron affinity surfaces and good electron transport properties and also the easily acquired, this huge of application value caused people＇s attention. B-doped diamond thin films with different concentration were prepared with H2/CH4/B2 H6 using microwave plasma chemical vapor deposi- tion（MPCVD） technology. The results show that the textures, constitutes and secondary electrons emission yield of diamond thin films are influenced by the concentration of boron. The highest quality diamond thin films are prepared when the flux of boron is 4mL/min, and the secondary electrons emission yield reached around 90.