氧化钨薄膜气致变色机理的研究进展

Development of the Mechanism of Gasochromic Coloration of Tungsten Oxide Films

首先介绍了氧化钨薄膜的气致变色效应及其潜在的应用,然后概述了氧化钨气致变色机理的双注入模型和氧空位扩散模型及其存在的争议性问题,并在此基础上介绍了由本研究组发展的气致变色结构水分子模型。最后,指出氧化钨薄膜气致变色机理的研究工作不仅有助于人们更好地理解薄膜材料的变色效应,有效地提高变色器件的性能,同时也能推动相关学科(如氢的储存、氢的探测、离子传输材料以及半导体表面催化等学科)的发展。

The gasochromic effect and its potential applications of tungsten oxide films are introduced, and then the mechanism models responding to the gasochromic coloration of tungsten oxide films are discussed. The controver- sial questions between the doubie-iniection model and oxygen-vacancy-diffusion model are also pointed out, and a new model of gasochromic coloration is developed to explain these controversial questions and is introduced in detail. At last, the study of the mechanism of gasochromic coloration of tungsten oxide films not only. helps one to understand gasochromic coloration well and improves the performance of gasochromic coloration devices, but also propels the development of the relative sciences,such as hydrogen storage, hydrogen detector, ion transport material, surface catalysis of semiconductor, and so on.