双层复合栅介质膜的制备及电学性能研究

Fabrication and electrical properties of double layer insulator

介电常数分别为2.6的聚甲基丙烯酸甲酯(PMMA)及介电常数为16的偏氟乙烯-三氟乙烯共聚物(P(VDF-TrFE))两种不同的有机绝缘材料,通过溶液旋涂的方法在P型硅衬底上制备了不同结构的复合栅介质膜并测试了它们的高频C-V特性及漏电特性。实验结果表明Si-PMMA-P(VDF-TrFE)-Ag结构绝缘膜上单位面积电容达到了35nF/cm2,40V电压下漏电流随着扫描次数的增加逐渐由7.29×10-7 A/cm2降低至3.44×10-7 A/cm2。而Si-P(VDF-TrFE)-PM-MA-Ag结构栅介质膜测得的单位面积电容仅为15nF/cm2,在相同电压下的单位面积漏电流为1.93×10-8 A/cm2。在此基础上分析了电子陷阱以及电场强度对双层栅绝缘膜C-V、I-V特性的影响。

Based on solution processing,use two kinds of materials which have different dielectric constant,2.6 for PMMA and 16 for P（VDF-TrFE）.Fabricate two different structures of double-layer insulating films on P type silicon substrates and test their high frequency C-V characteristic and leakage characteristics.For Si-PMMA-P（VDF-TrFE）-Ag structure,the capacitance per unit is 35nF/cm2 and leakage current under 40V decrease gradually from 7.29×10-7A/cm2 to 3.44×10-7A/cm2 with the number of scans increase.When comes to the Si-P（VDF-TrFE）-PMMA-Ag structure,the capacitance measured is only 15nF/cm2,and the leakage current is 1.93×10-8A/cm2 at the same voltage.Based on this we analysis the influence of electron traps and electric field strength for the C-V and I-V characteristics in double layer insulating films.