摘要
运用X 射线衍射(XRD)、Anger 电子能谱(AES)等方法研究了不同晶面取向的Si 衬底对Pd 硅化物薄膜形成的影响:在Si(111)衬底上,形成外延生长的Pd_2Si;在Si(100)衬底上,Pd_2Si 为择优取向的多晶.实验结果表明,在这两种Si 衬底上,Pd 硅化物有不同的形成温度和相转变温度.文中讨论了退火温度对Pd_2Si 的结构、组分和电阻率的影响,并应用热力学规律及界面作用过程解释了实验结果.
By means of XRD,AES and others we investigated the formation of Pd
silicides on Si(111)and Si(100)substrates,compared different interfacial
performances and the formed silicides between Pd/Si(111)and Pd/Si(100)
systems.It is shown that the Pd silicides have different formation tempera-
tures and different phase change temperatures.We also analysed the effect
of a variety of annealing temperatures on the structure,stcichiometry,and
resistivity of the Pd silicide.All the results are explained in the light of
thermodynamics and interfacial process.
基金
中国科学院中国科技大学结构分析开放实验室基金
关键词
金属
硅化物
薄膜
PD
SI
界面
metal-semiconductor interface
silicide
metallized thin film.
