摘要
电子自旋共振(ESR)实验结果确定:氢气区熔单晶硅的电子自旋总数随样品平均厚度的相对变化不是体效应,而是面效应.面效应的特点是当样品表面与磁场的央角在0°至140°范围内变化时,含氢硅的g 因子保持不变;在O°至±90°范围内ESR 信号强度由大变小,正负转向基本对称.由此推测:Si(H)/Si_2O_2界面中硅悬挂键的数量较少.并观测得:无论红外光照前或后,含氢硅的ESR 信号强度都不随微波功率饱和,并归因于自旋-自旋弛豫时间很小,约T_2=1.4×10^(-(?))秒.
It is determined in ESR experiments that the relation of the total num-
ber of electron spins to the average thickness of samples in FZ single crys-
tal of silicon grown in hydrogen atmosphere is not a bulk effet,but a rather
surface effect.Besides,it is discovered that its g-factor remauns mnchanged
when the angle between the surface of the sample and the magnetic intensity
H,θ changes from 0°to 140°,and its intensity of ESR signal varies symme-
trically from strong to weak when θ changes from 0°to+90°.Hence we infer
that the quantity of dangling bonds in Si(H)/SiO_2 interface is very small.
Finally it is observed that the intensity of ESR signal does not reach satu-
ration with the increase of microwave power,no matter before or after the
irradiation of infra-red light.This is because its spin-spin relaxation time is
very short,T_2=1.4×10^(-?) second.
基金
中国科学院中国科技大学结构分析开放实验室基金
关键词
单晶硅
氢气区熔
面效应
ESR
FZ single crystal of sillicon grown in hydrogen atmasphere
dangling bonds
spin-spin relaxation time.
