摘要
采用直流磁控溅射技术,在玻璃衬底上直接生长出了具有绒面结构的H化Ga掺杂ZnO(HGZO)薄膜。研究了H2流量对薄膜结构、表面形貌及光电特性的影响。实验表明,在溅射过程中引入H2明显改善HGZO薄膜电学性能,并且能够直接获得具有绒面结构的薄膜。在H2流量为2.0sccm时,所制备的HGZO薄膜具有特征尺寸约200nm的类金字塔状表面形貌,同时薄膜方阻为4.8Ω,电阻率达到8.77×10-4Ω.cm。H2的引入可以明显改善薄膜短波区域的光学透过,生长获得的HGZO薄膜可见光区域平均透过率优于85%,近红外区域波长到1 100nm时仍可达80%。为了进一步提高薄膜光散射能力和光学透过率,根据不同H2流量下HGZO薄膜性能的优点,提出了梯度H2技术生长HGZO薄膜;采用梯度H2工艺生长获得的HGZO薄膜长波区域透过率有了一定的提高,薄膜具有弹坑状表面形貌,并且其光散射能力有了明显提高。
Natively textured hydrogenated gallium-doped zinc oxide(HGZO) thin films were deposited via direct current(DC) magnetron sputtering on glass substrates at the substrate temperature of 280 ℃.These natively textured HGZO thin films exhibit high optical transmittance(over 80%) in the visible and near infrared region(λ~380-1 100 nm) and excellent electrical properties.The as-grown optimized HGZO thin films with pyramid-like textured surface obtained at the hydrogen flow rate of ~2.0 sccm exhibit a relative low sheet resistance of ~4.8 Ω and resistivity of 8.77×10-4 Ω·cm.The influence of hydrogen flow rate on the surface morphology,electrical and optical properties for HGZO thin films is investigated in detail.We put forward a method of gradient H2 for growing HGZO thin films so as to obtain good create-like feature size and high optical transmittance as well as high electrical conductivity.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2012年第4期724-729,共6页
Journal of Optoelectronics·Laser
基金
国家“973”重点基础研究(2011CBA00705,2011CBA00706,2011CBA00707)
国家高技术研究发展计划(2009AA050602)
科技部国际合作(2009DFA62580)
天津市应用基础及前沿技术研究计划(09JCYBJC06900)
中央高校基本科研业务费专项资金(65010341)资助项目