期刊文献+

Structural and optical properties of Zn_3N_2 films prepared by magnetron sputtering in NH_3-Ar mixture gases

Structural and optical properties of Zn_3N_2 films prepared by magnetron sputtering in NH_3-Ar mixture gases
原文传递
导出
摘要 Zinc nitride films were prepared by RF magnetron sputtering a metallic zinc target in NH3-Ar mixture gases on glass substrate at room temperature. The effects of NH3 ratio on the structural and optical properties of the films were examined. X-ray diffraction (XRD) analysis indicates that the films are polycrystalline and have a preferred orientation of (321). An indirect optical band gap increased from 2.33 to 2.70 eV when the NH3 ratio varied from 5% to 25%. The photoluminescence (PL) spectrum shows two emission peaks; the peak located at 437 nm is attributed to the incorporation of oxygen, and the other at 459 nm corresponds to the intrinsic emission. Zinc nitride films were prepared by RF magnetron sputtering a metallic zinc target in NH3-Ar mixture gases on glass substrate at room temperature. The effects of NH3 ratio on the structural and optical properties of the films were examined. X-ray diffraction (XRD) analysis indicates that the films are polycrystalline and have a preferred orientation of (321). An indirect optical band gap increased from 2.33 to 2.70 eV when the NH3 ratio varied from 5% to 25%. The photoluminescence (PL) spectrum shows two emission peaks; the peak located at 437 nm is attributed to the incorporation of oxygen, and the other at 459 nm corresponds to the intrinsic emission.
机构地区 School of Physics
出处 《Journal of Semiconductors》 EI CAS CSCD 2012年第4期13-16,共4页 半导体学报(英文版)
基金 Project supported by the National Natural Science Foundation of China(No.10974077) the Natural Science Foundation of Shandong Province,China(No.2009ZRB01702) the Shandong Province Higher Educational Science and Technology Program,China(No. J10LA08)
关键词 zinc nitride films magnetron sputtering NH3 ratios PHOTOLUMINESCENCE zinc nitride films magnetron sputtering NH3 ratios photoluminescence
  • 相关文献

参考文献7

  • 1Zhang J,Xie E Q,Fu Y J. Influence of substrate temperature and nitrogen gas on zinc nitride thin films prepared by RF reactive sputtering[J].Chinese Journal of Semiconductors,2007,(08):1173.
  • 2Futsuhara M,Yoshioka K,Takai O. Structural,electrical and optical properties of zinc nitride thin films prepared by reactive RF magnetron sputtering[J].Thin Solid Films,1998,(1/2):274.doi:10.1016/S0040-6090(97)00910-3.
  • 3Voulgaropoulou P,Dounis S,Kambilafka V. Optical properties of zinc nitride thin films fabricated by RF-sputtering from ZnN target[J].Thin Solid Films,2008,(22):8170.doi:10.1016/j.tsf.2008.04.025.
  • 4Khan W S,Cao C B,Ping D Y. Optical properties and characterization of zinc nitride nanoneedles prepared from ballmilled Zn powders[J].Materials Letters,2011,(09):1264.doi:10.1016/j.matlet.2011.01.040.
  • 5Zong F J,Ma H L,Du W. Optical band gap of zinc nitride films prepared on quartz substrates from a zinc nitride target by reactive RF magnetron sputtering[J].Applied Surface Science,2006,(22):79836.doi:10.1016/j.apsusc.2005.10.006.
  • 6Yang T L,Zhang Z S,Li Y H. Structural and optical properties of zinc nitride films prepared by RF magnetron sputtering[J].Applied Surface Science,2009,(06):3544.doi:10.1016/j.apsusc.2008.07.210.
  • 7Kambilafka V,Voulgaropoulou P,Dounis S. Thermal oxidation of n-type ZnN films made by RF-sputtering from a zinc nitride target,and their conversion into p-type films[J].Superlattices and Microstructures,2007,(1-6):55.doi:10.1016/j.spmi.2007.04.038.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部