摘要
This paper presents the investigation of integrated electrostatic discharge （ESD） protection design for the gate oxide of an RFLDMOS （radio frequency lateral double diffusion MOS）. Through a comprehensive dis cussion of experimental and simulated results, a cascoded NMOS is presented as appropriate integrated gate oxide ESD protection with a high holding voltage and a flexible ESD design window.
This paper presents the investigation of integrated electrostatic discharge （ESD） protection design for the gate oxide of an RFLDMOS （radio frequency lateral double diffusion MOS）. Through a comprehensive dis cussion of experimental and simulated results, a cascoded NMOS is presented as appropriate integrated gate oxide ESD protection with a high holding voltage and a flexible ESD design window.
