摘要
This paper presents a study of the total ionization effects of a 0.18 #m technology. The electrical para meters of NMOSFETs were monitored before and after irradiation with 6~Co at several dose levels under different drain and substrate biases. Key parameters such as offstate leakage current and threshold voltage shift were studied to reflect the ionizing radiation tolerance, and explained using a parasitic transistors model. 3D device simulation was conducted to provide a better understanding of the dependence of device characteristics on drain and substrate biases.
This paper presents a study of the total ionization effects of a 0.18 #m technology. The electrical para meters of NMOSFETs were monitored before and after irradiation with 6~Co at several dose levels under different drain and substrate biases. Key parameters such as offstate leakage current and threshold voltage shift were studied to reflect the ionizing radiation tolerance, and explained using a parasitic transistors model. 3D device simulation was conducted to provide a better understanding of the dependence of device characteristics on drain and substrate biases.
