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An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers 被引量:4

An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers
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摘要 We have developed an alkaline barrier slurry (named FA/O slurry) for barrier removal and evaluated its chemical mechanical planarization (CMP) performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP. We have developed an alkaline barrier slurry (named FA/O slurry) for barrier removal and evaluated its chemical mechanical planarization (CMP) performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP.
出处 《Journal of Semiconductors》 EI CAS CSCD 2012年第4期140-143,共4页 半导体学报(英文版)
基金 Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308) the National Natural Science Foundation of China(No.10676008) the Tianjin Natural Science Foundation of China(No.10JCZDJC15500) the Fund Project of Hebei Provincial Department of Education,China(No.2011128)
关键词 barrier CMP alkaline barrier slurry surface roughness DISHING barrier CMP alkaline barrier slurry surface roughness dishing
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参考文献15

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