摘要
The mechanism of the femtosecond laser ablation of semiconductors is investigated. The collision pro cess of free electrons in a conduction band is depicted by the test particle method, and a theoretical model of nonequilibrium electron transport on the femtosecond timescale is proposed based on the FokkerPlanck equa tion. This model considers the impact of inverse bremsstrahlung on the laser absorption coefficient, and gives the expressions of electron drift and diffusion coefficients in the presence of screened Coulomb potential. Numerical simulations are conducted to obtain the nonequilibrium distribution function of the electrons. The femtosecond laser ablation thresholds are then calculated accordingly, and the results are in good agreement with the experimental results. This is followed by a discussion on the impact of laser parameters on the ablation of semiconductors.
The mechanism of the femtosecond laser ablation of semiconductors is investigated. The collision pro cess of free electrons in a conduction band is depicted by the test particle method, and a theoretical model of nonequilibrium electron transport on the femtosecond timescale is proposed based on the FokkerPlanck equa tion. This model considers the impact of inverse bremsstrahlung on the laser absorption coefficient, and gives the expressions of electron drift and diffusion coefficients in the presence of screened Coulomb potential. Numerical simulations are conducted to obtain the nonequilibrium distribution function of the electrons. The femtosecond laser ablation thresholds are then calculated accordingly, and the results are in good agreement with the experimental results. This is followed by a discussion on the impact of laser parameters on the ablation of semiconductors.
