SiC中子探测器的研究进展

Research Progress in Silicon Carbide Neutron Detector

相比于气体、闪烁体及常规半导体中子探测器,基于第三代半导体材料SiC的中子探测器具有体积小、响应快、位置分辨率好、抗高温和耐辐照等众多优点。其中抗高温和耐辐照是应用于核反应堆堆芯、高能物理试验和太空等高温高压以及强辐射环境下的中子探测器需要突破的瓶颈。论文总结和分析了SiC的材料特性,SiC中子探测器的结构、工作原理、国内外发展现状以及存在的问题,并对我国中子探测器的发展趋势进行了探讨。

The detectors which are based on the third era semiconductor material SiC offer several important advantages over gas,scintillator and conventional semiconductor neutron detectors,such as compact size,faster charge-collection times,better location and spatial resolution,temperature and radiation hardness et al.A detector capable of operating at elevated temperatures and in high radiation fields including nuclear reactors,high-energy physical experiment and outer space,is the chokepoint that neutron detector need to break through.This article introduces the properties of the epitaxial silicon carbide material,SiC neutron detector configuration,work principle,also summarizes and analyses recent researches and problems need to solve of SiC neutron detector at home and abroad.At last,discusses the developing direction of radiation detectors in the interior.