多晶硅太阳电池低温变温扩散工艺的优化

Polycrystalline silicon solar cell cryogenic variable-temperature diffusion process optimization

采用少子寿命测试仪对扩散前后的硅片少子寿命进行了分析,当扩散后的方块电阻控制在55～65Ω时,低温变温扩散工艺处理的硅片少子寿命最高达到12.18μs,低温恒温扩散工艺处理的硅片少子寿命为10.67μs,高温恒温扩散工艺处理的硅片少子寿命为8.20μs。低温变温扩散工艺处理的太阳电池分别比传统的低温恒温扩散工艺处理和高温恒温扩散工艺处理的太阳电池转换效率提高0.79%和0.42%。

The minority carrier lifetime of polysilicons before and after diffusion were evaluated by the minority carrier lifetime tester.The results showed that when the sheet resistance reached 55~65 Ω,the minority carrier lifetime of polysilicons treated by low variable temperature diffusion,low constant temperature diffusion,and traditional high temperature diffusion were 12.18 μs,10.67 μs and 8.20 μs respectively.Compared the low constant temperature diffusion process with traditional high temperature diffusion process,the solar conversion efficiency treated by low variable temperature diffusion process increased by 0.79% and 0.42%.