掺铟对碲锰镉晶体性能的影响(英文)

Effects of Indium Doping on the Properties of Cd_(1-x)Mn_xTe Crystals

通过近红外和红外透过谱表征,确定出掺铟后碲锰镉晶体透过率迅速下降,这是晶格吸收和自由载流子吸收共同作用的结果;而光致发光谱的分析结果表明,掺杂后施主-受主对峰增加,受主束缚激子峰减弱,且随着In含量的增加,受主束缚激子峰消失,只剩下施主-受主对峰。这一系列变化是因为替代的In原子作为施主补偿了Cd空位的缘故。拉曼光谱的测量显示,In掺杂导致'类CdTe'的纵向光学声子峰减弱;而磁学的测试结果则说明In的引入几乎不引起碲锰镉晶体磁化强度的变化。

The near-infrared （NIR） and infrared （IR） transmissions of Indium （In） doped Cd1-xMnxTe （CMT） crystals were measured, and both the results show that the transmittances decline dramatically after doping. The reason is that the lattice absorption and free carriers absorption together determine the 1R absorption of the crystals. The photoluminescence （PL） spectra measurements show that the donor-acceptor pair （D, A） peak is increased after doping, but the acceptor-bound exciton （A^0, X） peak is reduced. With increasing of In concentrations the （A^0, X） peak disappears and the （D, A） peak stands out completely. This series of changes result from that the substitutional In atoms act as donors and compensate the point defects Vcd. The Raman scattering （RS） measurements exhibit that In doping makes the RS spectra of the longitudinal-optic （LO1） phonon peak a slight reduction, where LO1 is relative to the phonon peak of＂CdTe-like＂. Magnetization measurements show that the effects of In-doping on the magnetization of CMT are insignificant.