On-chip silicon light source： from photonics to plasmonics

实际的硅 photonic 相连现在在实际的硅光来源的实现以后变得可能，在由结合的 IIIV 半导体和硅的混合集成起一个基本作用的地方。Photonic 相连实质地驱散更少的力量并且比那些提供显著地更大的信息带宽电子相连；然而，一个新兴的问题是在 photonic 和电子部件之间的尺寸失配什么时候在一个薄片上综合。因此，出现 plasmonic 来源与深深地亚波长尺寸作为为在薄片上的基于 Si 的轻来源互连的下一代在强烈调查下面。在这份报纸，我们将在这个话题上考察一些最近的成就。

Practical silicon photonic interconnects become possible nowadays after the realization of the practical silicon light sources, where the hybrid integrations of III-V semiconductors and silicon by bonding play a fundamental role. Photonic interconnects dissipate substantially less power and offer a significantly greater information bandwidth than those of electronic interconnects; however, one emerging problem is the size mismatch between photonic and electronic components when integrated on a chip. Therefore, surface plasmonic source with deeply sub-wavelength size is under intense investigation as the next generation Si-based light source for on-chip interconnects. In this paper, we shall review some of the latest achievements on this topic.