摘要
Effects of different parameters on the melting, vaporization and resolidification processes of thin gold film irradiated by femtosecond pulses and pulse train were systematically studied. The classical two-temperature model was adopted to depict the non-equilibrium heat transfer in electrons and lattice, the melting and resolidification processes, which was~ characterized by the solid-liquid interfacial velocity, as well as elevated melting temperature and depressed solidifcation tempera- ture, was obtained by considering the interfacial energy balance and nucleation dynamics. Vaporization process which leads to ablation was described by tracking the location of liquid-vapor interface with an iterative procedure based on energy balance and gas kinetics law. The parameters in discussion included film thickness, laser fluence, pulse duration, pulse number, repetition rate, pulse train number, etc. Their effects on the maximum lattice temperature, melting depth and ablation depth were discussed based on the simulation results.
Effects of different parameters on the melting, vaporization and resolidification processes of thin gold film irradiated by femtosecond pulses and pulse train were systematically studied. The classical two-temperature model was adopted to depict the non-equilibrium heat transfer in electrons and lattice, the melting and resolidification processes, which was~ characterized by the solid-liquid interfacial velocity, as well as elevated melting temperature and depressed solidifcation tempera- ture, was obtained by considering the interfacial energy balance and nucleation dynamics. Vaporization process which leads to ablation was described by tracking the location of liquid-vapor interface with an iterative procedure based on energy balance and gas kinetics law. The parameters in discussion included film thickness, laser fluence, pulse duration, pulse number, repetition rate, pulse train number, etc. Their effects on the maximum lattice temperature, melting depth and ablation depth were discussed based on the simulation results.
