摘要
介绍了一种适用于LiTaO3、LiNbO3基片的金属剥离工艺技术。该剥离技术利用碱性溶剂浸泡处理光刻胶,光刻胶顶层形成一层有利于剥离的突出遮蔽层。利用该技术可制作线宽小于0.5μm的SAW芯片。该技术无需额外设备,工艺稳定且成本低。
A metal lift-off process suitable for LiTaO3 and LiNbO3 substrates have been introduced in this paper.It relies on formation of an inhibition layer at the top of the resist film by a simple treatment with an aqueous alkaline solution is introduced.This metal lift-off technique doesn′t need additional equipments,and can provide a good method of fabricating SAW chip with resolution of less than o.5 μm.This proposed technique has the features of good stability and low cost.
出处
《压电与声光》
CSCD
北大核心
2012年第2期163-165,168,共4页
Piezoelectrics & Acoustooptics
