摘要
采用射频磁控溅射系统,在Si(111)衬底上制备了不同溅射功率下的Mg2Si薄膜。通过X线衍射(XRD)和冷场发射电子显微镜镜(FESEM)对Mg2Si薄膜的晶体结构和表面形貌进行了表征,理论分析了Mg2Si薄膜在Si(111)衬底上的外延生长关系,得到了Mg2Si薄膜的外延生长特性。研究结果表明,在80～110 W的溅射功率范围内,Mg2Si薄膜具有Mg2Si(220)的外延择优生长特性,并且随着溅射功率的增加Mg2Si(220)衍射峰先增强后变弱,在100W功率下Mg2Si(220)衍射峰最强。
The epitaxial films of Mg2Si on Si（111） substrate were prepared with different sputtering power by RF magnetron sputtering system.The crystal structures and the surface morphology of the Mg2Si films were characterized by X-ray diffraction（XRD） and the field emission scanning electron microscope（FESEM）.The epitaxial growth characteristics of Mg2Si films on Si（111） substrates are obtained by theoretical analysis.The results show that,with increasing sputtering power from 80 W to 110 W,the Mg2Si films have one preferential growth feature of Mg2Si（220） and with increasing the sputtering power the intensity of the diffraction peak of Mg2Si film increase firstly,then decreases.The diffraction peak intensity of Mg2Si film was up to the strongest when the sputtering power was 100 W.
出处
《压电与声光》
CSCD
北大核心
2012年第2期273-275,共3页
Piezoelectrics & Acoustooptics
基金
湖北省教育厅科学技术研究计划基金资助项目
湖北省恩施州第一批农业与社会发展科技指导性基金资助项目
关键词
磁控溅射
MG2SI
溅射功率
外延生长
magnetron sputtering
Mg2Si
sputtering power
epitaxial growth
