溅射功率对AlN薄膜结构形貌的影响

Effect of Sputtering Power on Crystal Structure Morphology in AlN Thin Films

采用直流反应磁控溅射法在Si(111)基片上制备了AlN薄膜,利用X线衍射(XRD)、场发射扫描电子显微镜(FESEM)、原子力显微镜(AFM)对不同溅射功率下制备的AlN薄膜的结构及形貌进行了分析表征。结果表明:在一定范围内,随着溅射功率的增大,薄膜厚度增加,晶粒逐渐长大,表面粗糙度也随之增大;AlN(002)择优取向改善明显,120W时达到最佳。

AlN thin films were deposited by the direct current（DC） reactive magnetron sputtering technique on Si（111） substrates at different sputtering power.The X-ray diffraction（XRD）,field emission scanning electron morphology（FESEM） and atomic force microscope（AFM） were employed to characterize the films＇ morphology deposited at different sputtering power.The results show that within a certain range,the film thickness,crystal grain size and surface roughness values increased with increasing the input sputtering power;the preferential c-axis orientation has been improved significantly with increasing input sputtering power and it has been become optimal when the input power was up to 120 W.