真空气相沉积生长PTCDI-C8 N型有机薄膜晶体管

N-type Organic Thin-film Transistor Using N,N′-dioctyl-3,4,9,10-perylene Tetracarboxylic Diimides(PTCDI-C8) Grown by Vacuum Vapor Deposition

在大气环境下N型有机薄膜晶体管(OFET)的性能不稳定,为提高晶体管在大气环境稳定性,该文分别制作了SiO2单绝缘层器件和SiO2/PMMA双绝缘层器件。采用N型新材料PTCDI-C8作为有源层,Ag作为源、漏电极,对制作的不同绝缘层的器件进行聚对二甲苯的封装,对有源层进行形貌和晶体结构分析。并进行电流-电压(I-V)曲线测试。在相同工作电压下,双绝缘层器件比单绝缘层器件具有更大的场效应迁移率、开关电流比和更小的阈值电压。

The performance of N-type organic thin film transistors in the atmospheric environment are unstable.In order to improve the stability of transistors in the atmospheric environment,we fabricated a single insulating layer of SiO2 device and SiO2/PMMA double insulating layer devices,using novel N-type material PTCDI-C8 as the active layer,and Ag as source and drain electrodes.Both of them were packaged by poly-p-xylylene for measurement of I-V curve.The morphology and crystal structure of the active layer have been analyzed.The results reveal that the devices with PMMA as insulating layer has a good performance,the field-effect mobility and switching current are better than that of devices using SiO2 as insulation layer.It can be concluded that the materials and technology of packaging in our experiments can maintain the N-type organic thin film transistor performance.