一种基于厚膜工艺的高集成度FAIMS迁移管的研制

Design and fabrication of a highly integrated ion drift tube of FAIMS based on thick film technology

基于厚膜工艺,研制了一种集成有进样接口、气路接口、温控元件和离子源固定装置等外围功能模块的高集成度FAIMS迁移管,阐述了其结构特征和制作方法。为验证其性能,搭建了相应的FAIMS外围检测平台,以丙酮和甲苯为样品进行实验,得到了它们的FAIMS谱图,并与基于MEMS工艺的非集成FAIMS迁移管所测得的丙酮和甲苯的谱图比较,证明了高集成度迁移管在功耗、漏电流、气密性、灵敏度、分辨率和稳定性等方面的优异性能,说明高集成度迁移管适合作为小型化FAIMS独立检测系统的核心器件。

Ion drift tube （IDT） is the key component of IMS （Ion Mobility Spectrometry） and FAIMS （High-field Asymmetric waveform Ion Mobility Spectrometry）. In this paper, a highly integrated IDT chip for FAIMS was developed with Thick Film Technology （TFT）. Within the single chip, thermostatic components as well as the interfaces for gas carrier, sampling, ion source were incorporated. Experimental results shows that this TFT based IDT chip outperforms MEMS based Non-integrated IDT chip in terms of power consumption, current leakage, gas tightness, sensitivity, spectrum resolution and stability, making it a promising candidate for further development of portable and compact FAIMS instruments.