ZnO/ZnMgO异质结场效应管的制备与性能研究

Fabrication and Characteristics of ZnO/ZnMgO Heterostructure Field-effect Transistor

利用等离子体增强化学气相沉积(PECVD)技术,在ZnO/ZnMgO异质结构上制备SiO2作为栅绝缘层,采用光刻与腐蚀工艺制备ZnO/ZnMgO异质结场效应管。电学性能测试及计算结果表明器件栅压调控作用明显。发现栅端漏电流对器件性能造成一定影响。在低温条件下,栅绝缘层产生钝化,从而能够改善器件的性能。

The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor （HFET） were reported in this paper. The HFET was grown on a-plane sapphire substrate by metal-organic vapor phase epitaxy （MOVPE） technology, and was fabricated by a conventional photolithography tech- nique combined with wet etching. The experiment results indicated that the HFET was an n-channel depletion type with a transconductance of 180 μS · mm-1 and mobility of 182 cm2 · V^-1 . s^-1 at room temperature. The property was limited by leakage current through the SiO2, gate insulator. At low temperature, the performance was improved due to the reduced leakage current.