摘要
在导弹生产试验中,某型专用集成电路的硅片从管壳座上脱落。对失效样品脱落的形貌和能谱图进行仔细分析确定硅片脱离界面,分析工艺过程找到失效原因,改进硅片表面处理工艺。
Several cases of wafer breaking off from the shell of the ASIC chips occurred during missiles＇ESS tests.The breaking interface of the silicon chip is identified through the analysis of the failure sample＇s breaking feature and power spectra chart,hence the cause of the failure is confirmed and the remedy is advanced in this paper,which is to improve the superficial processing technique of the silicon chip.
出处
《电子质量》
2012年第4期29-30,33,共3页
Electronics Quality
关键词
硅片
脱落
ESS试验
污染
silicon chip
break off
ESS test
contamination
