摘要
首先通过金属有机化合物热分解(MOD)法在Si(100)基片上制备出LaNiO3(LNO)薄膜,再通过溶胶-凝胶(sol-gel)法,在LNO/Si(100)衬底上制备出(PbxLa1-x)TiO3(PLT)铁电薄膜。经XRD分析表明,LNO薄膜具有(100)择优取向的类钙钛矿结构,PLT/LNO/Si薄膜具有四方相钙钛矿结构,同时以(100)择优取向。最后对薄膜的介电性和铁电性进行了测试,发现薄膜介电常数适中,铁电性良好。
LaNiO3(LNO) thin films were prepared on Si(100) wafer by metalorganic decomposition(MOD) method.Then,(PbxLa1-x)TiO3(PLT) ferroelectric thin films were prepared on LaNiO3/Si substrates by Sol-gel method.XRD analysis showed that LaNiO3 thin films on Si(100) substrates possess single-phase perovskite-type structure and highly(100)-oriented,PLT thin films on LNO/Si(100) substrates possess tetragonal perovskite-type structure and highly(100)-oriented.Finally,the dielectric and ferroelectric properties of PLT thin films have been tested,which shows the dielectric constant was moderate and the remanent polarization was larger.
出处
《苏州科技学院学报(工程技术版)》
CAS
2012年第1期56-59,共4页
Journal of Suzhou University of Science and Technology (Engineering and Technology)
基金
江苏省自然科学基金项目(BK2005039)