摘要
带隙基准源是开关电源的重要组成部分。在对传统带隙基准源电路进行分析的基础上,结合曲率校正技术、高增益反馈技术和缓冲隔离技术,提出了一款应用于开关电源的高电源抑制比、低温漂系数和多基准输出新型基准源电路。基于0.5μm CMOS工艺,对电路进行仿真。结果表明,在-25℃~150℃范围内和典型(TT)工艺角下,设计的基准源温漂系数小于3×10-6/℃,PSRR为-78dB,可产生3V,1.2V,1V,0.2V四个基准输出电压。
Based on the analysis of conventional band-gap reference circuit,a novel multi-voltage band-gap reference source for switching power supply was proposed using curvature compensation,high power gain feedback and buffer isolation technologies.The circuit achieved a high power supply rejection ratio(PSRR) and low temperature drift coefficient.Simulation based on 0.5 μm CMOS technology at process corner TT,showed that,in the temperature range from-25 ℃ to 150 ℃,the multi-voltage reference circuit had a temperature drift coefficient less than 3×10-6/℃ and a PSRR of-78 dB,and it was capable of delivering four reference voltages:-3 V,1.2 V,1 V and 0.2 V.
出处
《微电子学》
CAS
CSCD
北大核心
2012年第2期246-249,269,共5页
Microelectronics
关键词
带隙基准源
曲率补偿
高增益反馈
隔离缓冲
Band-gap reference source
Curvature compensation
High power gain feedback
Isolation buffering