一种提高ESD性能的高压SBD器件结构研究

Study on High Voltage SBD with Improved ESD Performance

提出了一种新型SBD器件结构,并应用于高压SBD产品的研制。该结构通过在肖特基势垒区的硅表面增加一层表面缓冲掺杂层(Improved Surface Buffer Dope),将高压SBD的击穿点从常规结构的PN结保护环区域转移到平坦的肖特基势垒区,从根本上提高了器件的反向静电放电(ESD)和浪涌冲击能力。经流片验证,采用该结构的10A150VSBD产品和10A200VSBD产品均通过了反向静电放电(HBM模式)8kV的考核,达到目前业界领先水平。该结构工艺实现简单,可以应用于100V以上SBD的批量生产。

A novel device structure was proposed for high voltage Schottky barrier diode（SBD）.An improved buffer layer was doped into silicon surface of the Schottky barrier to shift breakdown point of high voltage SBD from PN junction of conventional protecting ring to flat Schottky barrier area,which improved reverse ESD and anti-surge-impulse performances of the device.10 A /150 V and 10 A/200 V SBD products using the novel structure were fabricated,which passed 8 kV reverse ESD（HBM） test.Featuring simple fabrication process,the new structure could be used for volume production of SBD＇s above 100 V.