SRAM型FPGA的静态与动态单粒子效应试验

Static and Dynamic Tests of Single-Event Effect in SRAM-Based FPGA

静态随机存取存储器(SRAM)型现场可编程门阵列(FPGA)在空间电子设备中取得了广泛的应用。但它内部大量的SRAM型存储单元极易发生单粒子软错误,特别是配置存储器中的单粒子翻转,有可能改变整个电路的结构,给其空间应用带来严重的可靠性问题。因此,有必要开展地面加速器模拟试验以评价该器件对单粒子效应的敏感程度,且对系统在空间中的失效行为进行预估。本工作在重离子加速器上对Xilinx的Virtex系列FPGA进行了单粒子效应试验,取得了典型器件的静态单粒子翻转截面曲线。针对3个测试电路进行的动态测试表明,系统的失效率远低于内部存储器发生翻转的频率,也不能简单地用资源占用率来进行估计。

Reconfigurable SRAM-based FPGA is an appealing solution for space electronic designs. However, the large amount of SRAM cells are very vulnerable to radiation induced single-event upsets （SEUs）. The upsets in the configurable memory may alter the circuit description and bring severe problem to the reliability of the space applications. Therefore, it is necessary to perform ground radiation test to study the SEU sensitivity and predict the system failure rate of typical designs. Static and dynamic tests of Xilinx Virtex device were carried out at heavy ion accelerators. The upset cross section of the device was measured. The dynamic test of the three benchmark circuits illustrates that the system failure rate is much lower than the configuration upsets and is highly correlative to the resource utilization.