4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺掺杂MoO_x作为空穴传输层对有机太阳电池性能的影响

Analysis of organic photovoltaic devices with MoO_x doped 4,4',4"-tris(N-(3-methylphenyl)-N-phenylamin) triphenylamine as hole transport layer

通过采用4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺(m-MTDATA)掺入MoO_x作为器件的空穴传输层来提高酞菁铜(CuPc)/C_(60)小分子有机太阳电池的效率.采用真空蒸镀的方法制备了一系列器件,其中结构为铟锡氧化物(ITO)/m-MTDATA:MoO_x(3:1)(30 nm)/CuPc(20 nm)/C_(60)(40 nm)/4,7-二苯基-1,10-菲罗啉(Bphen)(8 nm)/LiF(0.8 nm)/Al(100 nm)的器件,在AM1.5(100 mW/cm^2)模拟太阳光的照射条件下,开路电压V_(oc)=0.40 V,短路电流J_(sc)=6.59 mA/cm^2,填充因子为0.55,光电转换效率达1.46%,比没有空穴传输层的器件ITO/CuPc(20 nm)/C_(60)(40 nm)/Bphen(8 nm)/LiF(0.8 nm)/Al(100 nm)光电转换效率提高了38%,研究表明,加入m-MTDATA:MoO_x(3:1)(30 nm)空穴传输层减小了有机层和ITO电极之间的接触电阻,从而减小了整个器件的串联电阻,提高了器件的光电转换效率.

MoOx doped 4, 4, 4-tris（N-（3-methylphenyl）-N-phenylamin） triphenylamine （ra-MTDATA） is used as a hole transport layer to improve the efficiency of CuPc/C60 small molecular organic photovoltaics. A series of devices is fabricated in a high vacuum system. One of the devices with the structure of indum tin oxides （ITO）/m-MTDATA：MoOx（3：I）（30 nm）/CuPc（20 nm）/C6o（40 nm）/Bphen （8 nm）/LiF（0.8 nm）/Al（100 rim） shows that the following parameters are achieved： the open circuit voltage Voc = 0.40 V, short-circuit current Jsc = 6.59 mA/cm2, fill factor of 0.55, and power conversion efficiency r/p = 1.46% under AM1.5 solar illumination. The efficiency of the device is improved by 38% compared with that of the device without hole transport layer ITO/CuPc（20 nm）/C6o（40 nm）/Bphen（8 nm）/LiF（0.8 nm）/Al（100 nm）. The improvement of the device performance may be attributed to the addition of ra-MTDATA：MoOx（3：1） （30 rim） hole transport layer that reduces the contact resistance between the ITO electrode and the organic layer, thus reducing the overall device series resistance and improving the efficiency of the device.