摘要
通过采用4,4′,4″-三(N-3-甲基苯基-N-苯基氨基)三苯胺(m-MTDATA)掺入MoO_x作为器件的空穴传输层来提高酞菁铜(CuPc)/C_(60)小分子有机太阳电池的效率.采用真空蒸镀的方法制备了一系列器件,其中结构为铟锡氧化物(ITO)/m-MTDATA:MoO_x(3:1)(30 nm)/CuPc(20 nm)/C_(60)(40 nm)/4,7-二苯基-1,10-菲罗啉(Bphen)(8 nm)/LiF(0.8 nm)/Al(100 nm)的器件,在AM1.5(100 mW/cm^2)模拟太阳光的照射条件下,开路电压V_(oc)=0.40 V,短路电流J_(sc)=6.59 mA/cm^2,填充因子为0.55,光电转换效率达1.46%,比没有空穴传输层的器件ITO/CuPc(20 nm)/C_(60)(40 nm)/Bphen(8 nm)/LiF(0.8 nm)/Al(100 nm)光电转换效率提高了38%,研究表明,加入m-MTDATA:MoO_x(3:1)(30 nm)空穴传输层减小了有机层和ITO电极之间的接触电阻,从而减小了整个器件的串联电阻,提高了器件的光电转换效率.
MoOx doped 4, 4, 4-tris(N-(3-methylphenyl)-N-phenylamin) triphenylamine (ra-MTDATA) is used as a hole transport layer to improve the efficiency of CuPc/C60 small molecular organic photovoltaics. A series of devices is fabricated in a high vacuum system. One of the devices with the structure of indum tin oxides (ITO)/m-MTDATA:MoOx(3:I)(30 nm)/CuPc(20 nm)/C6o(40 nm)/Bphen (8 nm)/LiF(0.8 nm)/Al(100 rim) shows that the following parameters are achieved: the open circuit voltage Voc = 0.40 V, short-circuit current Jsc = 6.59 mA/cm2, fill factor of 0.55, and power conversion efficiency r/p = 1.46% under AM1.5 solar illumination. The efficiency of the device is improved by 38% compared with that of the device without hole transport layer ITO/CuPc(20 nm)/C6o(40 nm)/Bphen(8 nm)/LiF(0.8 nm)/Al(100 nm). The improvement of the device performance may be attributed to the addition of ra-MTDATA:MoOx(3:1) (30 rim) hole transport layer that reduces the contact resistance between the ITO electrode and the organic layer, thus reducing the overall device series resistance and improving the efficiency of the device.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第8期516-521,共6页
Acta Physica Sinica
基金
国家重点基础研究发展计划(批准号:2010CB327701)
国家高技术研究发展计划(批准号:2011AA03A110)
国家自然科学基金(批准号:60907013,60906021,60977024,60876032,60706018)
吉林省自然科学基金(批准号:20090136)资助的课题~~