常压化学气相沉积法氮氧化硅薄膜性能的研究

Properties of Silicon Oxynitride Thin Films Prepared by Atmospheric Pressure Chemical Vapor Deposition

我们用常压化学气相沉积法（APCVD），以SiH4和NH3为先驱体，在较低的温度（＜700℃）下制备氮氧化硅（Si-O-N）薄膜，并对其性能进行了研究。研究结果表明氮氧化硅薄膜能使改性后平板玻璃硬度提高40％，并具有良好的抗高温氧化性，这种薄膜在材料表面改性领域有着广阔的应用前景。

Silicon oxynitride thin films were prepared with SiH4 and NH3 by atmospheric pressure chemical vapor deposition(APCVD) at low temperature(<700℃), the properties of silicon oxynitride thin films were studied.The results showed that Si-O-N films have excellent resitivity to oxidation at high temperature, and could improve hardness of glass substrate , it has a wide prospect in materials surface modification.