摘要
我们用常压化学气相沉积法(APCVD),以SiH4和NH3为先驱体,在较低的温度(<700℃)下制备氮氧化硅(Si-O-N)薄膜,并对其性能进行了研究。研究结果表明氮氧化硅薄膜能使改性后平板玻璃硬度提高40%,并具有良好的抗高温氧化性,这种薄膜在材料表面改性领域有着广阔的应用前景。
Silicon oxynitride thin films were prepared with SiH4 and NH3 by atmospheric pressure chemical vapor deposition(APCVD) at low temperature(<700℃), the properties of silicon oxynitride thin films were studied.The results showed that Si-O-N films have excellent resitivity to oxidation at high temperature, and could improve hardness of glass substrate , it has a wide prospect in materials surface modification.
出处
《硅酸盐通报》
CAS
CSCD
2000年第2期19-21,共3页
Bulletin of the Chinese Ceramic Society
基金
国家自然科学基金
浙江省151人才工程资助
关键词
氮氧化硅
APCVD
高温氧化
改性
陶瓷薄膜
Silicon oxynitride APVCD hardness oxidation at high temperature surface modification