用微波电子自旋共振等离子源离子注入增强溅射沉积法在玻璃表面制备氧化铟膜

Preparation of Indium Oxide Film on Glass Surface Using Sputtering Deposition Synchro-enchanced by Microwave ECR Plasma Source lon-implantation

利用微波电子自旋共振等离子源离子注入增强沉积法在玻璃表面制备了非化学计量半导体氧化铟膜。与反应溅射和反应沉积相比，此法制备的氧化相膜与玻璃基体的附着良好，并因高的注入能量而改善了玻璃表面硬度。同时研究了In与O的结合能及浓度深度分布。

The non-stoichiomeny send-conductive indium oxide films were prepared on glass surface using magnetron-sputtering deposition sruchro-enhanced by microwave ECR plasma sour ion-implantation. Compared with reactive sputtering and reactive evaporation deposition, indium oxide fims thus prepared has better adhesion to the glass substrates with improved surface hardness due to the high implantation energy . The binding energy and depth profile of In and O were inverstigated as well.