摘要
An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor（UMOSFET） integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.mm 2 and 6.5 m.mm 2 for the gate bias voltages of 5 V and 10 V are achieved,respectively,and the breakdown voltage is 61 V.The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.
An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor（UMOSFET） integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.mm 2 and 6.5 m.mm 2 for the gate bias voltages of 5 V and 10 V are achieved,respectively,and the breakdown voltage is 61 V.The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.
基金
Project supported by the National Natural Science Foundation of China （Grant No. 60906048）
the Program for New Century Excellent Talents in University China （Grant No. NCET-10-0052）
