摘要
ZnO thin film growth prefers different orientations on the etched and unetched SrTiO 3（STO）（110） substrates.Inclined ZnO and cobalt-doped ZnO（ZnCoO） thin films are grown on unetched STO（110） substrates using oxygen plasma assisted molecular beam epitaxy,with the c-axis 42 inclined from the normal STO（110） surface.The growth geometries are ZnCoO[100]//STO[110] and ZnCoO[111]//STO[001].The low temperature photoluminescence spectra of the inclined ZnO and ZnCoO films are dominated by D 0 X emissions associated with A 0 X emissions,and the characteristic emissions for the 2 E（2G）→ 4A2（4F） transition of Co 2＋ dopants and the relevant phonon-participated emissions are observed in the ZnCoO film,indicating the incorporation of Co 2＋ ions at the lattice positions of the Zn 2＋ ions.The c-axis inclined ZnCoO film shows ferromagnetic properties at room temperature.
ZnO thin film growth prefers different orientations on the etched and unetched SrTiO 3（STO）（110） substrates.Inclined ZnO and cobalt-doped ZnO（ZnCoO） thin films are grown on unetched STO（110） substrates using oxygen plasma assisted molecular beam epitaxy,with the c-axis 42 inclined from the normal STO（110） surface.The growth geometries are ZnCoO[100]//STO[110] and ZnCoO[111]//STO[001].The low temperature photoluminescence spectra of the inclined ZnO and ZnCoO films are dominated by D 0 X emissions associated with A 0 X emissions,and the characteristic emissions for the 2 E（2G）→ 4A2（4F） transition of Co 2＋ dopants and the relevant phonon-participated emissions are observed in the ZnCoO film,indicating the incorporation of Co 2＋ ions at the lattice positions of the Zn 2＋ ions.The c-axis inclined ZnCoO film shows ferromagnetic properties at room temperature.
基金
Project supported by the National Basic Research Program of China (Grant No. 2009CB929202)
the National Natural ScienceFoundation of China (Grant Nos. 10834001 and 51125004)
