摘要
InGaAsP/GaAs激光器能抑制暗线缺陷的形成 ,器件的突然失效及缓慢退化有所减少。研究表明 ,高功率无铝半导体激光器比有铝的AlGaAs/GaAs激光器具有更高的可靠性。文章分析比较了高功率有铝和无铝半导体激光器的优缺点 ,介绍了波长为 80 8nm的高功率无铝半导体激光器的发展及国内外目前的研究状况。
Study on comparison between AlGaAs/GaAs and InGaAsP/GaAs high power laser diodes indicates that Al-free lasers are more reliable due to a reduction of dark line defects,sudden failure and gradual degradation. In this presentation, the advantages of Al-free high power semiconductor lasers are discussed. The development of Al-free high power lasers emitted at 808 nm and the research situation both at home and abroad are introduced.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2000年第2期80-84,共5页
Semiconductor Optoelectronics
关键词
半导体激光器
量子阱
砷化镓
铝
semiconductor laser
high power
quantum well
SCH
