摘要
介绍了InP基应变补偿MQW的研究进展 ,对应变补偿和非应变补偿MQW的特性做了对比。讨论了InP基应变补偿MQW存在的问题及如何优化InP基应变补偿MQW的生长条件。
It is shown that strain compensation can effectively increase the critical layer thickness or the number of periods in the multiple quantum well (MQW)structure .Compared with a strain-uncompensated MQW on InP subtrates ,strain-compensated MQW exhibits superior in structure and optical properties. Influence of the growth conditions is studied as well.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2000年第2期85-87,共3页
Semiconductor Optoelectronics
基金
国家自然科学基金资助重大项目!(6 9896 2 6 0 )
关键词
应变补偿
磷化铟
量子阱
InP substrate
strain-compensation
MQW
