1.3μm和1.55μmGaInAsP/InP阵列激光器

1.3 μm and 1.55 μm GaInAsP/InP Laser Arrays

GaInAsP/InP系列激光器由于其T0 小 ,且受环境温度影响大 ,所以用一般结构制作阵列器件是很困难的。而采用大光腔 (LOC)结构的激光器 ,其T0 值可达 10 0～ 140K ,单个 1.3μm激光器 ,脉冲峰值功率超过 3W ,单个 1.55μm激光器 ,脉冲峰值功率超过 2W。用它们的芯片研制了堆积阵列激光器。在研制中发现 ,阵列的输出功率小于各单元器件输出功率之和 ;而减小的比率随着单元数目增加而增加。所制成的 3× 4单元的 1.3μm阵列激光器 ,其脉冲峰值功率大于 2 4W ;4× 4单元的 1.55μm阵列激光器的脉冲峰值功率大于 2 0W。

It is difficult to make a common array device with GaInAsP/InP lasers due to their low T 0 and high sensitivity to the surrounding temperature.For the lasers with large optical cavity, T 0 can be as high as 100～140 K and the peak pulsed output power is more than 3 W for 1.3μm lasers and 2 W for 1.55 μm lasers. In making stacks with such laser chips we found that the array output power is lower than the sum of the output power of individual lasers and the reduced ratio increases with the increase of the number of individual lasers. The pulsed peak power is over 24 W for the 3×4 array of 1.3 μm lasers and 20 W for the 4×4 array of 1.55 μm lasers.