摘要
研究了多孔硅制备过程中光照对孔隙率大小的影响。实验结果表明 ,在不同的光照度下孔隙率会出现一极大值。从光化学过程对这一结果进行了理论分析。
The influnence of irradiation on porosity during preparation of porous silicon(PS) is studied in this paper.The experimental results show that the porosity of PS has a maximum value under a certain irradition.Theoretical analysis is given to this result based on photochemical process.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2000年第2期147-149,共3页
Semiconductor Optoelectronics
基金
国家自然科学基金资助项目! (6 96 6 6 0 0 1)
关键词
多孔硅
孔隙率
光照度
porous silicon
porosity
irradiation
