脉冲强激光辐照半导体材料损伤效应的解析研究

An Analytical Investigation on Semiconductor Material Damage Induced by Pulsed High-power Laser Beams

研究了强激光辐照半导体材料Insb时的热输运、自由载流子输运和光子输运过程，探讨了激光对半导体材料的损伤机理。为半导体材料的辐射效应和抗辐射加固技术提供了一个理论证据。

It is given that an analytical investigation on thermal, free carrier, and photon transport of semiconductor InSb material which is irradiated by pulsed high-power laser beams. The damage mechanism of semiconductor material is discussed. From these results, the theoretical basis of laser irradiating effects and hardening techniques on semiconductor materials is obtained.