浮栅隧道氧化层EEPROM中浮栅上电荷泄漏研究

The Study for Charge Leakage on The Floating gate of FLOTOX EEPROM

本文从研究不同单元尺寸浮栅隧道氧化层EEPROM在不同状态、不同温度保存下阈值电压的变化入手 ,论述了浮栅隧道氧化层EEPROM中浮栅上电荷的泄漏机理 ,并提出了改进EEPROM保持特性的措施 .

Based on the research on the changes of threshold voltage of FLOTOX EEPROM cells in different size under various states and storage temperatures,the mechanism for charge leakage on the floating gate of FLOTOX EEPROM is discussed.Then,the methods to improve the retention characteristic of FLOTOX EEPROM are presented.