摘要
本文用由于禁带变窄引起的吸收边漂移造成的电子吸收来研究了砷化镓高功率高速光导开关的延迟时间 ,给出了初始开态场、照射激光波长和温度对延迟时间的影响的简单公式 .结果表明开关的半导体片对照射激光的吸收因子增大了开关的延迟时间 ,在计算中应该加以考虑 .
The delay time gallium arsenide (GaAs) high power high speed photoconductive switches is studied on the basis of electroabsorption caused by absorption edge shifting due to bandgap narrowing.A simple formulation for the influences of the initial open state field,the laser wavelength and the temperature is given.The results show that the absorption fraction of the semiconductor slab of the switch increases the delay time of switches and should be considered in the calculation.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2000年第5期125-126,124,共3页
Acta Electronica Sinica
基金
中国博士后科学基金资助课题
中国工程物理研究院应用电子学研究所资助课题
关键词
砷化镓
光导开关
延迟时间
吸收因子
GaAs high power high speed photoconductive switch
absorption edge shifting
delay time
absorption coefficient
absorption fraction
