超高速CMOS/SOI51级环振电路的研制

Fabrication of High-speed 51-stage CMOS/SOI Ring Oscillators

利用CMOS/SOI工艺在 4英寸SIMOX材料上成功制备出沟道长度为 1μm、器件性能良好的CMOS/SOI部分耗尽器件和电路 ,从单管的开关电流比看 ,电路可以实现较高速度性能的同时又可以有效抑制泄漏电流 .所研制的 5 1级CMOS/SOI环振电路表现出优越的高速度性能 ,5V电源电压下单门延迟时间达到 92ps,同时可工作的电源电压范围较宽 ,说明CMOS/SOI技术在器件尺寸降低后将表现出比体硅更具吸引力的应用前景 .

CMOS/SOI devices as well as 51 stage ring oscillators with channel design length of 1μm are fabricated using 4 inch SIMOX wafers.SOI MOSFETs show high saturated current while still remain cut off current very low.Unloaded 51 stage ring oscillators reported here have very good speed performance.Under 5V supply voltage,the delay per stage reaches 92ps.These results are attributed to excellent short channel characteristics as well as low parasitic performance in CMOS/SOI,which verify that there is significant room for continued performance improvement in scaled CMOS/SOI.