铁电存储器技术

FRAM Technique

详细论述了铁电存储器 (FRAM)的工作原理、发展过程、技术特性、理论和技术及实际生产中的限制 ,分析了 FRAM的优势及弱点 ,认为 1G位的 FRAM可望在五年内实现。

FRAMs operation principle,development course,technique characteristic,limitations of theory, technology and practical manufacture process are discussed,and FRAMs advantages and disadvantages are analyzed also.It is considered that 1Gbit FRAM will be realized in five years.