摘要
IGCT是一种基于 GTO结构、利用集成门极结构进行门极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件 ,具有晶闸管的通态特性及晶体管的开关特性。本文将对 IGCT的开发过程、结构特点、器件特性及其应用前景等进行介绍。
IGCT is a new type of power semiconductor devices based on GTO structure,hard drived by an integrated gate unit and adopted from buffer layer transparent emitter technology.It combines the on state features of a thyristor with the rugged switching behaviour of a transistor.The devolopment process,the structure features,the properties and the applications of IGCT are reviewed in this paper.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第3期9-9,共1页
Semiconductor Technology
