InP系列异质材料中的宽带隙夹层和它对材料特性的影响

The Wide BandGap Sandwith in InP Series Heterostructure Materials and its Effects on Materials Characteristic

In Ga As/ In Ga As P/ In P等异质材料在室温和低温下光荧光测试中的厚度为 3～ 30 nm宽带隙夹层峰。夹层的化学成分主要是 In Ga P,它与 MOCVD生长时开关程序和 PH3或 As H3气流空流时间及气体存储时间等紧密相关。实验表明 ,对 In P/ In Ga As P/ In P异质材料生长 ,As H3气流空流时间为 0 .5秒左右时 ,宽带隙夹层峰基本消失。还指出宽带隙夹层将引起较大的晶格失配 ,增加异质界面缺陷 ,从而使材料光学特性恶化。

The wide bandgap sandwith peaks observed in measuaring photoluminscence spectroscopy at room and low temperature are reported in this paper.The sandwith width can be in range of 3nm to 30nm.Its chemical compositions are mainly InGaP which width depended on MOCVD switch procedure,PH 3 or AsH 3 running ovrer time,and gas memory time.They indicated that the wide bandgap sandwith would disappear when AsH 3 running over time is about 0 5 second after growing of InGaAsP materials.They also pointed out that the wide bandgap sandwith would cause the bigger lattice mismatch,increase hetero interface dislocations,therefore,decrease the material opitical properties.