不同代硝基芳基苄醚树枝配体轴向取代硅(Ⅳ)酞菁光物理性质的比较

Comparison of Photophysical Properties of Poly(Nitro Aryl Benzyl Ether) Axially Substituted Phthalocyanine Silicon(Ⅳ)

在二氯硅酞菁轴向位置引入硝基芳基苄醚树枝配体是一种减少酞菁配合物聚集体形成,提高其光动力活性的有效方法。本文采用UV/Vis、稳态和瞬态荧光光谱法比较了1-3代硝基芳基苄醚树枝配体轴向取代硅(Ⅳ)酞菁的光物理性质。研究结果表明,随着轴向树枝配体代数的增加,Q带最大吸收峰强度增大,酞菁核荧光强度增强,荧光量子产率降低,荧光寿命增长。研究结果将为开发轴向取代硅(Ⅳ)酞菁配合物作为新型光敏剂提供重要的理论依据。

Poly （nitro aryl benzyl ether） dendritic ligands axially substituted phthalocyanine silicon （IV） is an effective approach to reduce the formation of aggregation leading to higher photodynamic therapy efficacy. The photophysical properties of 1-3rd generations poly（nitro aryl benzyl ether） dendritic ligands axially substituted phthalocyanine silicon （Ⅳ） were studied by UV-Vis, steady-state fluorescence and time-resolved fluorescence spectrum. With the dendrimer increased, the intensity of fluorescence, singlet state lifetimes and Q band absorption spectra of phthaloeyanine core increased, while their fluorescence quantum yield decreased gradually. G3-SiPe（NO2）16 can be regarded as an ideal photosensitizer and may have a high potential utility for in vivo photodynamie therapy applications.