摘要
利用 LP- MOCVD技术在 Ga As( 0 0 1 )衬底上生长了高质量的立方相 In Ga N外延层 .研究了生长速率对 In Ga N质量的影响 ,提出一个简单模型解释了在改变 TEGa流量条件下出现的In组分的变化规律 ,实验结果与模型的一次项拟合结果较为吻合 ,由此推断 ,在现在的生长条件下 ,表面单个 Ga原子作为临界晶核吸附 Ga或 In原子实现生长的模型与实际情况较为接近 .对于晶体质量的变化也给予了说明 .得到的高质量立方相 In Ga N室温下有很强的发光峰 ,光致发光峰半高宽为 1 2 8me V左右 .
High quality cubic\|phase InGaN has been grown on GaAs(001) substrate by metalorganic chemical vapor deposition (MOCVD). The influence of growth rate on the quality of the InGaN epilayer is investigated and a simple model to explain the variations in In components at different TEGa flow rates is proposed.The experimental result is agreement with the first\|order item of the model.A single Ga atom on the surface can act as a critical core to capture the Ga or In atom,and realize the growth.Variations in the InGaN crystal quality which are caused by the change of the TEGa flow rate,are pointed out and simply explained.At room temperature,strong emission dominates the high quality cubic phase InGaN PL spectrum,whose full width of half maximum (FWHM) is 128meV.
