a-SiO_x∶H/a-SiO_y∶H多层薄膜微结构的退火行为

Annealing Behavior of Microstructure in a SiO_x∶H/a SiO_y∶H Multilayer Films\+*

采用 PECVD技术在 P型硅衬底上制备了 a- Si Ox∶ H/a- Si Oy∶ H多层薄膜 ,利用 AES和 TEM技术研究了这种薄膜微结构的退火行为 .结果表明 :a- Si Ox∶ H/a- Si Oy∶ H多层薄膜经退火处理形成 nc- Si/Si O2 多层量子点复合膜 ,膜层具有清晰完整的结构界面 .纳米硅嵌埋颗粒呈多晶结构 ,颗粒大小随退火温度升高而增大 .在一定的实验条件下 ,样品在 650℃下退火可形成尺寸大小合适的纳米硅颗粒 .

Hydrogenated amorphous silicon oxide multilayer film (a\|SiO_x∶H/ a\|SiO_y∶H) was deposited on the crystalline(111)Si by PECVD. Using AES and TEM techniques, we investigated the annealing behavior of the microstructure in this kind of multilayer film. The results show that the a\|SiO x ∶H/SiO y ∶H multilayer film brings about the formation of nc\|Si/SiO 2 multilayer composite film by annealing. The embedded Si nanocrystals is of a polycrystalline structure.The estimated mean diameter is 6nm at 650℃ after 30min annealing, and the mean size increases as the annealing temperature increases. We analyzed the mechanism of the formation of the thin nc\|Si/SiO 2 multilayer film.